منابع مشابه
Silicon Carbide Neutron Detectors
The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...
متن کاملDamage Induced by Pions in Silicon Detectors
High-resistivity, ion-implanted silicon detectors have been irradiated with positive and negative pions up to fluences of 1014 cm–2 and 1013 cm–2, respectively. The energy dependence of the leakage-current damage constant around the ∆ resonance is presented. Studies of the leakagecurrent damage constants (corrected for self-annealing and the long-term value) and the evolution of the depletion v...
متن کاملDetectors for Energy-Resolved Fast Neutron Imaging
Two detectors for energy-resolved fast-neutron imaging in pulsed broad-energy neutron beams are presented. The first one is a neutron-counting detector based on a solid neutron converter coupled to a gaseous electron multiplier (GEM). The second is an integrating imaging technique, based on a scintillator for neutron conversion and an optical imaging system with fast framing capability.
متن کاملPerformance of silicon microdosimetry detectors in boron neutron capture therapy.
Reverse-biased silicon p-n junction arrays using Silicon-On-Insulator technology have been proposed as microdosimeters. The performance of such detectors in boron neutron capture therapy (BNCT) is discussed. This work provides the first reported measurements using boron-coated silicon diode arrays as microdosimeters in BNCT. Results are in good agreement with measurements with gas proportional ...
متن کاملRadiation Damage in Silicon Detectors for High-Energy Physics Experiments
Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the h...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1989
ISSN: 0168-9002
DOI: 10.1016/0168-9002(89)91091-7